Methods of increasing write selectivity in an MRAM

ABSTRACT

MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.

RELATED APPLICATION

The present application is a divisional application of U.S. patentapplication Ser. No. 10/327,581, by Li et al., filed on Dec. 20, 2002,which is a continuation application of U.S. patent application Ser. No.09/964,218, filed Sep. 25, 2001 Li et al., which issued as U.S. Pat. No.6,522,574 on Feb. 18, 2003, which in turn is a divisional application ofU.S. patent application Ser. No. 09/618,504 by Li et al., filed on Jul.18, 2000, which issued as U.S. Pat. No. 6,424,561 on Jul. 23, 2002. Thepresent application is also related to U.S. Pat. No. 6,424,564, issuedJul. 23, 2002.

GOVERNMENT RIGHTS

This invention was made with Government support under Contract NumberMDA972-98-C-0021 awarded by DARPA. The Government has certain rights inthis invention.

BACKGROUND OF THE INVENTION

The present invention relates to non-volatile memories, and moreparticularly to Giant Magneto Resistive (GMR) memories that use one ormore word lines and one or more digital lines to select and writeindividual memory bits.

Digital memories of various kinds are used extensively in computer andcomputer system components, digital processing systems and the like.Such memories can be formed, to considerable advantage, based on thestorage of digital bits as alternative states of magnetization ofmagnetic materials in each memory cell, typically thin-film materials.These films may be thin magneto-resistive films having informationstored therein based on the direction of the magnetization occurring inthose films. The information is typically obtained either by inductivesensing to determine the magnetization state, or by magneto-resistivesensing of each state.

Such thin-film magneto-resistive memories may be conveniently providedon the surface of a monolithic integrated circuit to thereby provideeasy electrical interconnection between the memory cells and the memoryoperating circuitry on the monolithic integrated circuit. When soprovided, it is desirable to reduce the size and increase the packingdensity of the thin-film magneto-resistive memory cells to achieve asignificant density of stored digital bits.

Many thin-film magneto-resistive memories include a number of parallelword lines intersected by a number of parallel digital lines. A thinmagneto-resistive film is provided at the intersection of each word lineand digital line. As such, the thin film magneto-resistive memory cellstypically are configured an array configuration having a number of rowsand a number of columns.

FIG. 1 is a schematic diagram illustrating a conventional thin filmMagnetic Random Access Memory (MRAM architecture. Parallel word lines12, 14, 16, 18 and 20 are provided in a vertical direction and paralleldigital lines 22 and 24 are provided in a horizontal direction. In thediagram shown, only a portion of the MRAM array is shown. A thin filmmagneto-resistive memory cell is provided at the intersection of eachword line and digital line. Referring specifically to FIG. 1, thin filmmagneto-resistive memory cells 28 a, 28 b, 28 c, 28 d and 28 e areprovided at the intersection of digital line 22 and word lines 12, 14,16, 18 and 20, respectively. Likewise, thin film magneto-resistivememory cells 30 a, 30 b, 30 c, 30 d and 30 e are provided at theintersection of digital line 24 and word lines 12, 14, 16, 18 and 20,respectively.

The thin film magneto-resistive memory cells in each row are typicallyconnected in a string configuration to form a corresponding sense line.For example, thin film magneto-resistive memory cells 28 a, 28 b, 28 c,28 d and 28 e, which correspond to row 32, are connected in a stringconfiguration to form sense line 34. Sense line 34 typically includes anumber of non-magnetic connectors 34 a, 34 b, 34 c, 34 d, 34 e, and 34 fto connect each end of the thin film magneto-resistive memory cells tothe end of the adjacent thin film magneto-resistive memory cells. Thenon-magnetic connectors 34 a, 34 b, 34 c, 34 d, 34 e, and 34 f aretypically formed using a conventional metal interconnect layer. Thesense lines are used to provide current to a particular row of thin filmmagneto-resistive memory cells, and ultimately, to sense the resistanceof a selected one of the cells.

To write a value (i.e. zero or one) to a selected memory cell, a wordline current is provided to the word line that extends adjacent theselected memory cell. Likewise, a digital line current is provided tothe digital line that extends adjacent the selected memory cell. In someinstances, a sense line current is also provided to the sense line thatthat includes the selected memory cell.

The polarity of the word line current typically determines the value tobe written into the selected memory cell. To illustrate this further,the magnetic fields produced by word line current 40, digital linecurrent 42 and sense current 44 at memory cell 30 a are shown in FIG. 1,assuming digital line 46 and word line 12 extend above memory cell 40.The polarity of the various currents would change if the correspondingword or digital line extend below the memory cell.

The magnetic field H_(wl) 48 produced by word line current 40 extends tothe right and along the major axis of the memory cell 40 as shown. Themagnetic field H_(dl) 50 produced by digital line current 42 extendsupward and along the minor axis of the memory cell 40. Finally, themagnetic field H_(sl) 52 produced by sense line current 44 extendsupward and along the minor axis of the memory cell 40.

The magnetic field H_(wl) 48 produced by word line current 40 providesthe longitudinal force to switch the magnetization vector of theselected memory cell to the right, which in the example shown,corresponds to the desired value to be written. The magnetic fieldsH_(dl) 50 and H_(sl) 52 produced by digital line current 42 and senseline current 44, respectively, provide the lateral torque necessary toinitiate the switching of the magnetic vector of the selected memorycell.

FIG. 2 is a graph showing a typical write margin curve for an MRAMmemory cell. The x-axis of the graph represents the magnetic fieldcomponent H_(wl) 48 that extends down the major axis of the memory cell30 a, typically provided by the word line current. The y-axis representsthe magnetic field component H_(dl) 50 that extends across the minoraxis of the memory cell 30 a, typically provided by the digital linecurrent (and sense line current when so provided). The variouscombinations of H_(wl) 48 and H_(dl) 50 that are required to write thememory cell 30 a are represented by curve 56.

To provide some write margin, the sum of H_(wl) 48 and H_(dl) 50 (whichproduce a vector 58) must extend to the right of curve 56. The closerthat the sum of H_(wl) 48 and H_(dl) 50 is to curve 56, the less writemargin is present. As the write margin decreases, it becomes moredifficult to reliably write a selected memory cell. It also becomes moredifficult to prevent other non-selected memory cells from beinginadvertently written. To overcome these limitations, there are oftenvery stringent process requirements for control of bit dimensions, edgeroughness, and bit end contamination levels in the memory cells. Theseprocess requirements can become particularly burdensome as the memorycell size decreases to increase packing density.

The magneto-resistive memory cells are often GMR type memory cells. GMRtype cells typically include a number of magnetically layers separatedby a number of non-magnetic coercive layers. To considerable advantage,the magnetic vectors in one or all of the layers of a GMR type cell canoften be switched very quickly from one direction to an oppositedirection when a magnetic field is applied over a certain threshold. Thestates stored in a GMR type cell can typically be read by passing asense current through the memory cell via the sense line and sensing thedifference between the resistances (GMR ratio) when one or both of themagnetic vectors switch.

A limitation of many GMR type cells is that the magnetic field requiredto switch the magnetic vectors can be relatively high, which means thatrelatively high switching currents are required. This increase incurrent, or magnetic field, can result in a substantial operating power,especially in large memory arrays. As the size of the GMR cells shrinkto accommodate higher density applications, the switching fields thatare required also increase. It is expected under such circumstances thatthe current density in the word and/or digital lines may become too higheven for Cu metallization.

One way to increase the write margin and reduce the current densityrequirements of such a device is shown in FIG. 5 of the article“Experimental and Analytical Properties of 0.2 Micron Wide, Multi-Layer,GMR, Memory Elements”, Pohrn et al., IEEE Transactions on Magnetics,Volume 32, No. 5, September 1996. FIG. 5 of Pohm et al. shows a digitalline traversing the memory cells at an angle relative to the major axisof the memory cell, and in a triangle shaped pattern. Referring to FIG.3, such an arrangement may produce a magnetic field H_(dl) 70 that hastwo components: a component along the minor axis of the memory cell anda component along the major axis of the memory cell. When this iscombined with the magnetic field H_(wl) 48 of the word line, theresulting magnetic vector 72 may extend further beyond curve 56 asshown, resulting in an increased write margin 74 and increased writeselectivity relative to the MRAM architecture illustrative in FIG. 1.

A limitation the Pohin et al. is that the triangle shaped pattern of thedigital line may significantly reduce the packing density of the memory,at least relative to a memory that uses substantially straight paralleldigital lines and word lines. As can be seen in FIG. 5 of Pohm et al.,the minimum spacing between the digital lines is shown to be 0.25 um,which is presumably dictated by the particular design rules of theprocess used. Assuming the digital lines traverse the memory cells at a30 degree, the effective spacing between the digital lines in the ydirection is 0.29 um (0.25 um/cos(30 degrees)), which represents a 16%reduction in packing density.

Another limitation of Pohm et al. is that the digital line configurationshown in FIG. 5 only produces a limited magnetic field component alongthe major axis of the memory cell. For some VfAM applications, it may bedesirable to maximize the magnetic field component down the major axisof the memory cell. What would be desirable, therefore, is anMRAM-architecture that produces an increased write margin and writeselectivity without significantly reducing the packing density of thememory. What would also be desirable is an MRAM architecture thatmaximizes the magnetic field component along the major axis of thememory cell.

SUMMARY OF THE INVENTION

The present invention overcomes many of the disadvantages associatedwith the prior art by providing MRAM architectures that produce anincreased write margin and write selectivity without significantlyreducing the packing density of the memory. The present invention alsoprovides MRAM architectures that maximize the magnetic field componentalong the major axis of the memory cell.

In a first illustrative embodiment of the present invention, amagneto-resistive storage element is provided that includes an elongatedmagneto-resistive bit at the intersection of an elongated word line andan elongated digital line. The elongated digital line is substantiallystraight and extends substantially perpendicular to the elongated wordline. In contrast to the prior art, however, the axis of the elongatedmagneto-resistive bit is offset relative to the axis of the elongateddigital line and the axis of the elongated word line so as to be notparallel with the axis of the elongated digital line and notperpendicular to the axis of the elongated word line.

The elongated magneto-resistive storage element discussed above ispreferably provided in an array of like elongated magneto-resistive bitsto form a magneto-resistive (MRAM) memory. The array ofmagneto-resistive bits is preferably arranged to have a number of rowsand columns. A number of elongated word lines are provided so as toextend substantially parallel to one another and adjacent only thosemagneto-resistive bits in a corresponding column. A number of elongateddigital lines are also provided so as to extend substantially parallelto one another and adjacent only those magneto-resistive bits in acorresponding row. The magneto-resistive bits in each row ofmagneto-resistive bits are preferably electrically connected in a stringconfiguration to form a corresponding sense line.

The major axis of each elongated magneto-resistive bits is preferablyoffset relative to the axes of the elongated digital lines and the axesof the elongated word lines so as to be not parallel with the axes ofthe elongated digital lines and not perpendicular to the axes of theelongated word lines. Because the major axis of the magneto-resistivebits are offset relative to axis of the digital line, the magnetic fieldH_(dl) produced by the digital line current at the magneto-resistive bitincludes a component along the major axis of the magneto-resistive bit.As described above, this may help increase the write margin and writeselectivity of the memory.

In another illustrative embodiment of the present invention, therelative orientation of the magneto-resistive bits to the digital linesis the same as described above. However, in this embodiment, the axes ofthe word lines are not perpendicular to the axes of the digital wordlines. Rather, the axes of the word lines are substantiallyperpendicular to the major axis of the magneto-resistive bits. Like theprevious embodiment, and because the major axis of the magneto-resistivebits are offset relative to axis of the digital line, the magnetic fieldH_(dl) produced by the digital line current at the magneto-resistive bitincludes a component along the major axis of the magneto-resistive bit.As described above, this may help increase the write margin and writeselectivity of the memory.

Unlike the previous embodiment, however, the axes of the word lines aresubstantially perpendicular to the major axis of the magneto-resistivebits. This helps keep the entire magnetic field H_(wl) produced by theword line current aligned with the major axis of the magneto-resistivebit, which may further help increase the write margin and writeselectivity of the memory.

In another illustrative embodiment of the present invention, a MRAMmemory is provided that maximizes the magnetic field components alongthe major axis of the memory cell. This may improve overall writemargins and write selectivity of the memory, while reducing write lineand/or digital line current requirements. In this embodiment, two ormore elongated magneto-resistive bits are provided, each having anelongated word line and an elongated digital line extending adjacentthereto.

The axis of each of the elongated magneto-resistive bits is preferablysubstantially perpendicular to the axis of a corresponding elongatedword line. This helps keep the entire magnetic field H_(wl) produced bythe word line current aligned with the major axis of themagneto-resistive bit. In addition, however, the axis of each of theelongated digital lines extends substantially parallel to the axis ofthe elongated word line, at least in the region of eachmagneto-resistive bit. This may be accomplished by, for example,providing a zig-zag shaped digital line.

In this configuration, and because the elongated digital lines extendsubstantially parallel to the axis of the elongated word lines (andperpendicular to the axis of the elongated magneto-resistive bits), theentire magnetic field H_(dl) produced by the digital line current may besubstantially aligned with the major axis of the magneto-resistive bits.For some applications, this may significantly improve the overall writemargins and write selectivity of the memory, while reducing write lineand/or digital line current requirements. When necessary, a magneticfield H_(sl) produced by a sense line current can be used to providelateral torque to initially rotate the magnetic field vector of themagneto-resistive bits.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects of the present invention and many of the attendantadvantages of the present invention will be readily appreciated as thesame becomes better understood by reference to the following detaileddescription when considered in connection with the accompanyingdrawings, in which like reference numerals designate like partsthroughout the figures thereof and wherein:

FIG. 1 is a schematic diagram showing a conventional prior art MRAMarchitecture;

FIG. 2 is a graph showing a typical write margin curve for an MRAMmemory device;

FIG. 3 is a schematic diagram of a first illustrative MRAM architecturein accordance with the present invention;

FIG. 4 is a schematic diagram of another illustrative MRAM architecturein accordance with the present invention; and

FIG. 5 is a schematic diagram of yet another illustrative MRAMarchitecture in accordance with the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 3 is a schematic diagram of a first illustrative MRAM architecturein accordance with the present invention. In this embodiment, an arrayof elongated magneto-resistive bits 100 a, 100 b, 100 c, 100 d, 100 e,102 a, 102 b, 102 c, 102 d, and 102 e are provided. The array ofmagneto-resistive bits includes a number of columns 104 a, 104 b, 104 c,104 d, and 104 e and a number of rows 106 a and 106 b. For clarity, onlya portion of a typical MRAM array is shown.

A number of parallel extending word lines 108 a, 108 b, 108 c, 108 d,and 108 e are also provided adjacent respective columns of the array ofmagneto-resistive bits. For example, word line 108 a extends adjacentmagneto-resistive bits 100 a and 102 a, word line 108 b extends adjacentmagneto-resistive bits 100 b and 102 b, word line 108 c extends adjacentmagneto-resistive bits 100 c and 102 c, word line 108 d extends adjacentmagneto-resistive bits 100 d and 102 d and word line 108 e extendsadjacent magneto-resistive bits 100 e and 102 e. It is contemplated thatthe word lines 108 a, 108 b, 108 c, 108 d, and 108 e may extend above orbelow the corresponding magneto-resistive bits.

A number of parallel digital lines 110 a and 110 b are provided adjacentrespective rows of the array of magneto-resistive bits. Each of thedigital lines corresponds to a corresponding row of magneto-resistivebits, and extends adjacent to only those magneto-resistive bits that arein the corresponding row. For example, digital line 110 a extendsadjacent to magneto-resistive bits 100 a, 100 b, 100 c, 100 d and 100 e,and digital line 110 b extends adjacent to magneto-resistive bits 102 a,102 b, 102 c, 102 d and 102 e. It is contemplated that the digital lines110 a and 110 b may extend above or below the magneto-resistive bits. Inthis configuration, each magneto-resistive bit is provided at theintersection of one word line and one digital line. ~Preferably, each ofthe digital lines 110 a and 110 b is substantially straight and parallelto all other digital lines. Likewise, each of the word lines 108 a, 108b, 108 c, 108 d and 108 e is preferably substantially straight andparallel to all other word lines. This may allow for an optimum packingdensity for the memory.

The magneto-resistive bits in each row of magneto-resistive bits arepreferably connected in a string configuration to form a correspondingsense line. For example, magneto-resistive bits 100 a, 100 b, 100 c, 100d and 100 e are shown electrically connected in a string configurationto form sense line 120 a. Likewise, magneto-resistive bits 102 a, 102 b,102 c, 102 d and 102 e are shown electrically connected in a stringconfiguration to form sense line 120 b. In a preferred embodiment, thesense lines are formed by electrically connected each magneto-resistivebit to an adjacent magneto-resistive bit using a non-magnetic segment,such as non-magnetic segment 127.

The memory may also include a number of current generators and a controlblock. Each sense line 120 a and 120 b has a corresponding sense currentgenerator circuit 130 a and 130 b, respectively. Likewise, each digitalline 110 a and 110 b has a corresponding digital line current generatorcircuit 132 a and 132 b. Finally, each word line 108 a, 108 b, 108 c,108 d, and 108 e has a corresponding write line current generatorcircuit 134 a, 134 b, 134 c, 134 d and 134 e, respectively.

Each of the sense current generator circuit 130 a and 130 b selectivelyproviding a sense current to the corresponding sense line. Each wordline current generator circuit 134 a, 134 b, 134 c, 134 d and 134 eselectively provides a word line current to the corresponding word line.Each digital line generator circuit 132 a and 132 b selectively providesa digital line current to the corresponding digital line.

The polarity of the current provided by the word line current generatorcircuits 134 a, 134 b, 134 c, 134 d and 134 e, and in some cases, thedigital line generator circuits 132 a and 132 b, determines the state tobe written into the selected magneto-resistive bit. For example, towrite a first state to magneto-resistive bit 102 a, the word linecurrent generator 134 a may provide a current in an upward direction andthe digital line generator circuit 132 b may provide a current in arightward direction. In contrast, to write a second opposite state tomagneto-resistive bit 102 a, the word line current generator 134 a mayprovide a current in an downward direction and the digital linegenerator circuit 132 b may provide a current in a leftward direction.

Controller 140 controls the sense current generator circuits 130 a and130 b , the digital line current generator circuits 132 a and 132 b, andthe word line current generator circuits 134 a, 134 b, 134 c, 134 d and134 c. In one illustrative embodiment, the controller 140 initiates awrite to a selected magneto-resistive bit by causing the correspondingdigital line current generator circuit 132 a or 132 b to provide adigital line current to the digital line that extends adjacent the rowthat includes the selected magneto-resistive bit. The controller alsocauses the corresponding word line current generator circuit 134 a, 134b, 134 c, 134 d or 134 e to provide a word line current to the word linethat extends adjacent the column that includes the selectedmagneto-resistive bit. In some embodiments, the controller 140 may alsocause the corresponding sense current generator circuit 130 a or 130 bto provide a sense current to the sense line that includes the selectedmagneto-resistive bit. The controller preferably accepts and decodes anaddress that uniquely identifies the particular digital line, word lineand sense line that correspond to the selected magneto-resistive bit.

Each of the magneto-resistive bits preferably has a major axis along itslength and a minor axis along its width. The major axis of each of theelongated magneto-resistive bit is preferably parallel to the major axisof all of the other elongated magneto-resistive bits. In theillustrative embodiment shown in FIG. 3, the major axis of eachelongated magneto-resistive bit is offset relative to the axes of theelongated digital lines and the axes of the elongated word lines so asto be not parallel with the axes of the elongated digital lines and notperpendicular to the axes of the elongated word lines. For example, themajor axis 122 of magneto-resistive bit 100 a is not parallel with theaxis of elongated digital line 110 a , and not perpendicular to the axisof elongated word line 108 a. Because the major axis of themagneto-resistive bits are offset relative to axis of the digital line,the magnetic field H_(dl) produced by the digital line current at themagneto-resistive bit includes a component along the major axis of themagneto-resistive bit. For example, and referring to magneto-resistivebit 102 a, the magnetic field H_(dl) 124 produced by the digital linecurrent 126 includes a component along the major axis of themagneto-resistive bit 102 a . As indicated above with reference to FIG.2, this may help increase the write margin and write selectivity of thememory.

FIG. 4 is a schematic diagram of another illustrative MRAM architecturein accordance with the present invention. In this illustrativeembodiment, the relative orientation of the magneto-resistive bits tothe digital lines is the same as described above with reference to FIG.3. However, in this embodiment, the axes of the word lines 150 a , 150b, 150 c, 150 d and 150 e are not perpendicular to the axis of thedigital line 154. Rather, the axes of the word lines 150 a, 150 b, 150c, 150 d and 150 e are substantially perpendicular to the major axis ofthe magneto-resistive bits 152 a, 152 b, 152 c, 152 d and 152 e. Thedigital line 154 extends generally along an axis along 2 points of theMRAM. Like the previous embodiment, and because the major axis of themagneto-resistive bits are offset relative to axis of the digital line154, the magnetic field H_(dl) 156 produced by the digital line currentat the magneto-resistive bits includes a component along the major axisof the magneto-resistive bits. As described above, this may helpincrease the write margin and write selectivity of the memory.

Unlike the previous embodiment, however, the axes of the word lines 150a, 150 b, 150 c, 150 d and 150 e are substantially perpendicular to themajor axis of the magneto-resistive bits 152 a, 152 b, 152 c, 152 d and152 e. This helps keep the entire magnetic field H_(wl) 158 produced bythe word line current aligned with the major axis of themagneto-resistive bit, which further may increase the write margin andwrite selectivity of the memory.

FIG. 5 is a schematic diagram of yet another illustrative MRAMarchitecture in accordance with the present invention. This embodiment,maximizes the magnetic field components along the major axis of thememory cell. This may help improve the overall write margins and writeselectivity, while reducing write line and/or digital line currentrequirements.

Like the embodiment shown in FIG. 3, the axis of each of the elongatedmagneto-resistive bits 160 a, 160 b, 160 c, 160 d and 160 e ispreferably substantially perpendicular to the axis of a correspondingelongated word line 162 a, 162 b, 162 c, 162 d, 162 e, respectively. Asindicated above, this helps keep the entire magnetic field H_(wl) 164produced by the word line current aligned with the major axis of themagneto-resistive bits. In addition, however, the axis of each of theelongated digital lines 166 extends substantially parallel to the axisof the elongated word lines, at least in the region of themagneto-resistive bits 160 a, 160 b, 160 c, 160 d and 160 e. This may beaccomplished by, for example, providing a zig-zag shaped digital line166.

For the illustrative zig-zag shape digital line, digital line 166 has anumber of vertical segments 172 a, 172 b, 172 c, 172 d and 172 e thatextend adjacent magneto-resistive bits 160 a, 160 b, 160 c, 160 d and160 e , respectively. The digital line 166 further has a number ofhorizontal segments 170 a, 170 b, 170 c and 170 d interconnecting thevertical segments between the magneto-resistive bits 160 a, 160 b, 160c, and 160 d. In this configuration, and because the elongated digitalline 166 extends substantially parallel to the axis of the elongatedword lines 162 a, 162 b, 162 c, 162 d, 162 e, and perpendicular to themajor axis of the elongated magneto-resistive bits 160 a, 160 b, 160 c,160 d and 160 e, the entire magnetic field H_(dl) 180 produced by thedigital line current may be substantially aligned with the major axis ofthe magneto-resistive bits 160 a, 160 b, 160 c, 160 d and 160 e. Forsome applications, this may significantly improve the overall writemargins and write selectivity of the memory, while reducing write lineand/or digital line current requirements. When necessary, a magneticfield H_(sl) 182 produced by a sense line current 184 can be used toprovide lateral torque to initially rotate the magnetic field vector ofthe magneto-resistive bits 160 a, 160 b, 160 c, 160 d and 160 e.

It is recognized that to align the magnetic field H_(dl) 180 produced bythe digital line current and the magnetic field H_(wl) 164 produced bythe word line current, the polarity of the word line current must beprovided in the same direction as the digital line current. Thus, andreferring to FIG. 5, the word line currents provided to adjacent wordlines must have opposite polarities. Accordingly, word line current 190extends in a downward direction through word line 162 a in the samedirection as digital line current 192. For the adjacent word line 162 b,the word line current 194 extends in an upward direction through wordline 162 b in the same direction as digital line current 196. Theremaining word line currents 200, 202 and 204 are provided in a likemanner. This produces a word line magnetic field (e.g. H_(wl) 164) andthe digital line magnetic field (e.g. H_(dl) 180) that are in the samedirection, at least in the region of the magneto-resistive bits.

Having thus described the preferred embodiments of the presentinvention, those of skill readily appreciate that the teachings foundherein may be applied within the scope of the claims hereto attached.

We claim:
 1. A method of fabricating a Magnetic Random Access Memory(MRAM) comprising: forming an array of magneto-resistive bits such thatthe magneto-resistive bits are further arranged in a plurality of rows,where a major axis of a magneto-resistive bit is offset from a row towhich it corresponds; forming a plurality of digital lines such that adigital line is adjacent to a row of magneto-resistive bits such thatthe digital line is offset from the major axes of the magneto-resistivebits in the row; forming a plurality of word lines such that a word linecrosses a digital line but is not perpendicular to the digital line,where the word line is substantially perpendicular to the major axes ofadjacent magneto-resistive bits; and forming a plurality of sense lines,where a sense line electrically connects magneto-resistive bits of arow.
 2. The method as defined in claim 1, further comprising forming theplurality of word lines such that word lines are substantially parallelto each other.
 3. The method as defined in claim 1, further comprisingforming the plurality of sense lines such that portions of sense linesdisposed between magneto-resistive bits are non-magnetic.
 4. A method ofstoring data in a Magnetic Random Access Memory (MRAM) comprising:receiving an address corresponding to a memory location of the MRAM,where the MRAM includes a plurality of magneto-resistive bits in anarray, a plurality of word lines, and a plurality of digital lines,where the magneto-resistive bits are further arranged in a plurality ofrows, where a major axis of a magneto-resistive bit is offset from a rowto which it corresponds, where a digital line is adjacent to a row ofmagneto-resistive bits such that the digital line is offset from themajor axes of the magneto-resistive bits in the row, where a word linecrosses a digital line but is not perpendicular to the digital line,where the word line is substantially perpendicular to the major axes ofadjacent magneto-resistive bits; receiving data to be stored in theMRAM; receiving a control signal that indicates a data write operation;relating the address to a word line and a digital line corresponding toa magneto-resistive bit in the array; and storing a first logical stateby activating word line current in the selected word line and byactivating digital line current in the selected digital line in responseto the control signal.
 5. The method as defined in claim 4, furthercomprising storing a second logical state by activating word linecurrent in the selected word line and by activating digital line currentin the selected digital line in response to the control signal, where adirection of flow of current used for the second logical state isopposite to than a direction for the first logical state.
 6. The methodas defined in claim 4, further comprising: selecting a sense linecorresponding to the selected magneto-resistive bit; and activatingcurrent in the selected sense line, where the sense line current flowsin a first direction along the sense line to store the first logicalstate, and where the sense line current flows in a second directionopposite to the first direction to store a second logical state.
 7. Themethod as defined in claim 4, wherein the word lines are substantiallyparallel to each other.
 8. A method of retrieving data stored in aMagnetic Random Access Memory (MRAM) comprising: receiving an addresscorresponding to a memory location of the MRAM, where the MRAM includesa plurality of magneto-resistive bits in an array, a plurality of wordlines, and a plurality of digital lines, where the magneto-resistivebits are further arranged in a plurality of rows, where a major axis ofa magneto-resistive bit is offset from a row to which it corresponds,where a digital line is adjacent to a row of magneto-resistive bits suchthat the digital line is offset from the major axes of themagneto-resistive bits in the row, where a word line crosses a digitalline but is not perpendicular to the word line, where the word line issubstantially perpendicular to the major axes of adjacentmagneto-resistive bits; receiving a control signal that indicates a dataread operation; relating the address to a word line, a digital line, anda sense line corresponding to a magneto-resistive bit; activatingcurrent to pass through the selected word line in a first word linedirection; activating current to pass through the selected digital linein a first digital line direction; sensing a first resistance of thesense line; activating current to pass through the selected word line ina second word line direction; activating current to pass through theselected digital line in a second digital line direction; sensing asecond resistance of the sense line; and comparing the first resistanceto the second resistance to retrieve the stored data.
 9. The method asdefined in claim 8, wherein the word lines are substantially parallel toeach other.